Abstract
The effect of strain, composition and disorder in ADF images is systematically studied as a function of detection angle in order to understand the main contrast mechanisms. We demonstrate that the complex phenomenology in ADF images can be accounted for by accurate simulations and modelling. The advantage of an accurate modelling on the image interpretation will be demonstrated in the case of dislocations, chemical analysis of InGaP/GaAs and most noticeably the measurement of both In and N content in quaternary InGaAsN.
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CITATION STYLE
Grillo, V., Mueller, K., Volz, K., Glas, F., Grieb, T., & Rosenauer, A. (2011). Strain, composition and disorder in ADF imaging of semiconductors. In Journal of Physics: Conference Series (Vol. 326). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/326/1/012006
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