Ultracompact and Low-Power Logic Circuits via Workfunction Engineering

Abstract

An extensive analysis of sub-10-nm logic building blocks utilizing ultracompact logic gates based on recently proposed gate workfunction engineering (WFE) approach is provided. WFE sets the WF in the contacts as well as two independent gates of an ambipolar Schottky-barrier (SB) FinFET to alter the threshold of two channels, as a unique leverage to modify the logic functionality out of a single transistor. Thus, a single transistor (1T) CMOS pass-gate, 2T NAND and NOR gates as well as 3T or 4T XOR gates with substantial reduction in overall area (50%) and power (up to × 10 ) dissipation can be implemented. To harness this potential and illustrate the capabilities of these compact ambipolar transistors, novel logic building blocks, including 6T multiplexer, 8T full-adder, 4T latch, 6T D-type flip-flop, and 4T AND-OR-invert (AOI) gates, are developed. Besides the logic verification using 7-nm devices, the dynamic performance of the proposed logic circuits is also analyzed. The comparative simulation study shows that WFE in independent-gate SB-FinFETs can lead to absolutely minimalist CMOS logic blocks without significant degradation to overall power-delay product (PDP) performance.