Capacitance characterization of GaP/Si superlattice grown by time-modulated PECVD

Abstract

The work is devoted to study of GaP/Si superlattice grown on n-type GaP wafer by time-modulated plasma-enhanced chemical vapor deposition. Deep-level transient spectroscopy showed appearance of defects in μc-GaP layer. Addition of silicon layers 0.5 nm thick leads to decreasing of deep defect concentration. However, further increasing of silicon content in superlattice leads to appearance of new deep defects in structure.