Abstract
Ga2S3, monoclinic, C1c1 (No. 9), a = 11.107(2) Å, b = 6.395(1) Å, c = 7.021(1) Å, β = 121.17(3)°, V= 426.7 Å3, Z = 4, Rgt(F) = 0.035, wRref(F2) = 0.084, T = 294 K. © 2014 Oldenbourg Wissenschaftsverlag GmbH, Rosenheimer Str. 145, 81671 München. All rights reserved.
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CITATION STYLE
APA
Jones, C. Y., Bryan, J. C., Kirschbaum, K., & Edwards, J. G. (2001). Refinement of the crystal structure of digallium trisulfide, Ga2S3. Zeitschrift Fur Kristallographie - New Crystal Structures, 216(1–4), 349–350. https://doi.org/10.1524/ncrs.2001.216.14.349
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