Adding memory to pressure-sensitive phosphors

Abstract

Mechanoluminescence (ML) is the phenomenon describing the emission of light during mechanical action on a solid, leading to applications such as pressure sensing, damage detection and visualization of stress distributions. In most cases, this mechanical action releases energy that was previously stored in the crystal lattice of the phosphor by means of trapped charge carriers. A drawback is the need to record the ML emission during a pressure event. In this work, we provide a method for adding a memory function to these pressure-sensitive phosphors, allowing an optical readout of the location and intensity of a pressure event in excess of 72 h after the event. This is achieved in the BaSi2O2N2:Eu2+ phosphor, where a broad trap depth distribution essential for the process is present. By merging optically stimulated luminescence (OSL), thermoluminescence (TL) and ML measurements, the influence of light, heat and pressure on the trap depth distribution is carefully analysed. This analysis demonstrates that mechanical action can not only lead to direct light emission but also to a reshuffling of trap occupations. This memory effect not only is expected to lead to new pressure sensing applications but also offers an approach to study charge carrier transitions in energy storage phosphors.