Optimization of electrical characteristics of TiO2-incorporated HfO2n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer

Abstract

Structural approach of Ti O2 -incorporated Hf O2 multimetal dielectric n -type doped gallium arsenide (n-GaAs) metal oxide semiconductor capacitors and their electrical characteristics are investigated. Top Ti O2 with bottom Hf O2 bilayer dielectric shows excellent C-V characteristics and the lowest hysteresis. Scaling down of this Ti O2 Hf O2 dielectric results in substantial reduction in hysteresis and equivalent oxide thickness compared to Hf O2 dielectric. Reduced hysteresis is believed to be due to lower trap density of Ti O2 than Hf O2. © 2007 American Institute of Physics.