Epitaxial Growth of SiC Films on 4H-SiC Substrate by High-Frequency Induction-Heated Halide Chemical Vapor Deposition

Abstract

SiC epitaxial wafers offer enormous potential for a wide range of telecom technologies due to their excellent properties. The experimental process was simulated by software, and the contour of gas flow velocity and raw material mass fraction inside the chamber were obtained. SiC films were epitaxially grown on 4H-SiC single crystalline substrates at different temperatures for one batch, using SiCl4, CH4, and H2 as precursors. With increasing temperature, the crystal phase changed from 4H-SiC at 1773 K to a mixture of 4H-and 3C-SiC, and then a mixture of 3C-SiC and graphite at higher than 1923 K. The film was mainly (004)-oriented 4H-SiC and (111)-oriented 3C-SiC.