Journal ArticleOPEN ACCESS

Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation

  • Matsuura H
The Open Applied Physics Journal (2011) 4(1) 37-40
DOI: 10.2174/1874183501104010037
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Abstract

The mechanism of the reduction in the electron concentration in lightly N-doped n-type 4H-SiC epilayers by 200 keV electron irradiation is investigated. From the temperature dependence of the electron concentration,) (T n

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Matsuura, H. (2011). Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation. The Open Applied Physics Journal, 4(1), 37–40. https://doi.org/10.2174/1874183501104010037

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