Quasi-quantized Hall response in bulk InAs

5Citations
Citations of this article
11Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE), exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials, consisting of stacks of weakly coupled 2D platelets that are yet characterized by a 3D anisotropic Fermi surface. However, it is predicted that the quasi-quantized 3D version of the 2D QHE should occur in a much broader class of bulk materials, regardless of the underlying crystal structure. Here, we compare the observation of quasi-quantized plateau-like features in the Hall conductivity of the n-type bulk semiconductor InAs with the predictions for the 3D QQHE in presence of parabolic electron bands. InAs takes form of a cubic crystal without any low-dimensional substructure. The onset of the plateau-like feature in the Hall conductivity scales with 2/3kFz/π in units of the conductance quantum and is accompanied by a Shubnikov–de Haas minimum in the longitudinal resistivity, consistent wit the results of calculations. This confirms the suggestion that the 3D QQHE may be a generic effect directly observable in materials with small Fermi surfaces, placed in sufficiently strong magnetic fields.

References Powered by Scopus

New method for high-accuracy determination of the fine-structure constant based on quantized hall resistance

5705Citations
N/AReaders
Get full text

Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal candidate NbP

964Citations
N/AReaders
Get full text

Possible states for a three-dimensional electron gas in a strong magnetic field

287Citations
N/AReaders
Get full text

Cited by Powered by Scopus

Quantum-Hall physics and three dimensions

9Citations
N/AReaders
Get full text

Three-dimensional quasiquantized Hall insulator phase in SrSi2

5Citations
N/AReaders
Get full text

Characterization of induced quasi-two-dimensional transport in n-type In<inf>x</inf>Ga<inf>1−x</inf>As<inf>1 − y</inf>Bi<inf>y</inf> bulk layer

2Citations
N/AReaders
Get full text

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Cite

CITATION STYLE

APA

Wawrzyńczak, R., Galeski, S., Noky, J., Sun, Y., Felser, C., & Gooth, J. (2022). Quasi-quantized Hall response in bulk InAs. Scientific Reports, 12(1). https://doi.org/10.1038/s41598-022-05916-2

Readers over time

‘21‘22‘23‘25036912

Readers' Seniority

Tooltip

PhD / Post grad / Masters / Doc 4

67%

Professor / Associate Prof. 1

17%

Researcher 1

17%

Readers' Discipline

Tooltip

Physics and Astronomy 5

63%

Nursing and Health Professions 1

13%

Social Sciences 1

13%

Engineering 1

13%

Save time finding and organizing research with Mendeley

Sign up for free
0