Thermal damages on the surface of a silicon wafer induced by a near-infrared laser

  • Choi S
  • Jhang K
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Abstract

Laser-induced thermal damages of a silicon wafer surface subjected to continuous near-infrared laser irradiation were investigated. Silicon wafer specimens were illuminated by a continuous-wave fiber laser beam (1070-nm wavelength)with irradiances from 93 to 186 W/cm2, and the surface morphology of each specimen was analyzed using optical microscopy. With increasing irradiance, straight cracks in the <110> direction appeared first, and partial melting and complete melting were subsequently observed. The mechanism of these laser-induced thermal damages in the silicon wafer surface was discussed with numerical analysis based on the heat transfer and thermoelasticity model. The irradiances initiating the cracking and melting were predicted by determining the irradiances in which the calculated thermal stress and temperature exceeded the corresponding limits of the fracture strength and melting point, respectively. These predictions agreed well with the experimental findings. Laser-induced thermal damages of the silicon wafer surface subjected to a continuous near-infrared laser irradiation were identified based on these investigations. © The Authors.

Figures

  • Fig. 1 Schematic diagram of the experimental system.
  • Fig. 2 OM images of the silicon wafer surface (a) before and (b) after laser beam irradiation at 121 W∕cm2. The cracks were generated in the x ½110 and y ½1̄10 directions.
  • Fig. 3 (a) Schematic diagram of the silicon wafer surface at an irradiance of 139 W∕cm2, (b) OM image of the silicon wafer surface near the center of the laser beam spot and (c) OM image of the “A” zone in (a).
  • Fig. 4 (a) Schematic diagram of the silicon wafer surface at the irradiance of 149 W∕cm2 and (b) OM image of the “B” zone in (a).
  • Table 1 Summary of the experimental results.
  • Fig. 5 Simulation model of the silicon wafer subjected to a CW laser beam. The symbol “D” denotes the heat source volume, and the symbol “E” indicates the symmetric boundary. The specimen dimensions are given.
  • Table 2 Physical and optical properties of a silicon wafer depending on temperature.
  • Fig. 6 Simulation results for the profiles of stresses [(a) σxx , (b) σyy , (c) σzz , and (d) σv ] on the surface of silicon specimen subjected to a laser irradiance of 121 W∕cm2 for 20 s.

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CITATION STYLE

APA

Choi, S., & Jhang, K.-Y. (2014). Thermal damages on the surface of a silicon wafer induced by a near-infrared laser. Optical Engineering, 53(1), 017103. https://doi.org/10.1117/1.oe.53.1.017103

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