Two-dimensional heterostructure promoted infrared photodetection devices

Abstract

It is a rapidly developed subject in expanding the fundamental properties and application of two-dimensional (2D) materials. The weak van der Waals interaction in 2D materials inspired researchers to explore 2D heterostructures (2DHs) based broadband photodetectors in the far-infrared (IR) and middle-IR regions with high response and high detectivity. This review focuses on the strategy and motivation of designing 2DHs based high-performance IR photodetectors, which provides a wide view of this field and new expectation for advanced photodetectors. First, the photocarriers' generation mechanism and frequently employed device structures are presented. Then, the 2DHs are divided into semimetal/semiconductor 2DHs, semiconductor/semiconductor 2DHs, and multidimensional semi-2DHs; the advantages, motivation, mechanism, recent progress, and outlook are discussed. Finally, the challenges for next-generation photodetectors are described for this rapidly developing field.