Optical properties of photoluminescence of carbon doped silicon oxide films annealed by rapid temperature for passivation

Abstract

To research the chemical and optical properties, SiOC films made by the inductively coupled plasma chemical vapor deposition were analyzed the chemical shift by the Fourier transform infrared spectra and photoluminescence spectra. The chemical shift obtained in Fourier transform infrared spectra resulted from the increase of right shoulder Si-O bond in the main bond due to the delocalization and lowering polarization of carbon in Si-CH3. Increasing of the right shoulder bond of Si-O in side of higher wave number caused to change the degree of amorphous bonding structure depending on the reduction of polarization after annealing. The phenomenon of the delocalization in the carbon related bond of Si-CH3 was also confirmed by the chemical shift in the photoluminescence spectra. The PL intensity increased after annealing at samples 9 and 13 with low polarity. Low polarization induced to decrease the thickness of SiOC film, which could contribute to improve the stability due to the low surface energy and the effect of electron deficient of carbon. It was observed the blue shift by FTIR (Fourier transform infrared spectra) and red shift by PL (photoluminescence) spectra in LP (low polarization) SiOC films. © 2011 Springer-Verlag.