ELTRAN® (SOI-Epi Wafer™) Technology

Abstract

ELTRAN® (Epitaxial Layer TRANsfer), which is the first manufacturable and commercially available product using Porous Si, has been originated, developed and produced in Canon Inc., Japan. The last established technique is highly reproducible splitting in the Porous Si layer by Water Jet and reuse the seed wafer several times. The thicknesses of both SOI and the buried oxide layers are precisely controlled in the very wide range from the extremely thin as 27 nm to as thick as a few μm with the thickness uniformity less than +/- 5 %. The active layer has no COP (Crystal Originated Particle or Pits) by epitaxial growth. The buried oxide is thermally grown on epitaxial Si layers and has no pinholes. We have successfully expanded the wafers to 300-mm (12-inch) diameter, in which SOI-thickness-uniformity of ±1.1% was even better than 8 inch