Abstract
The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10-24 cm3/atom is obtained for the expansion coefficient due to B-H complexes.
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CITATION STYLE
APA
Stutzmann, M., Harsanyi, J., Breitschwerdt, A., & Herrero, C. P. (1988). Lattice relaxation due to hydrogen passivation in boron-doped silicon. Applied Physics Letters, 52(20), 1667–1669. https://doi.org/10.1063/1.99052
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