Abstract
N-type microcrystalline silicon oxide thin films (n-μc-SiO x:H) have been deposited by VHF-PECVD (40MHz) with reactant gas mixtures of CO2/SiH4 and H2. N-c-SiOx thin films exhibiting low refractive index value (n 600nm ∼2), and medium/high conductivity (> 10-9 S/cm) are suitable to be used as an n-type reflector in micromorph tandem solar cells. Transmission electron microscopy (TEM) results show that microstructures of n-c-SiOx:H thin films contain nanocrystalline Si particles, which are randomly embedded in the a-SiOx matrix. This specific microstructure provides n-c-SiO x:H thin films excellent optoelectronic properties; therefore, n- c-SiOx:H thin films are appropriate candidates for n-type reflector structures in Si tandem solar cells. Copyright © 2012 Chiung-Nan Li et al.
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![Figure 3: Physical properties of n-μc-SiOx :H thin films (thickness = 40∼50 nm) with R = 8∼20 under [H2] = 600 sccm (filled symbols) and 900 sccm (open symbols). (Δ, and : refractive index, n; , and : crystallinity; ◦, and •: dark conductivity).](https://s3-eu-west-1.amazonaws.com/com.mendeley.prod.article-extracted-content/images/b68e8fba-49b6-3e62-9b5d-c11532b66786/thumbnail-c30b5591-09a5-4663-bbcc-def5119dfb13-2.png)
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CITATION STYLE
Li, C. N., Fang, H. Y., Chen, Y. H., Yeh, C. M., Huang, C. F., Wang, Y. C., … Chen, C. H. (2012). Microcrystalline-silicon-oxide-based N-type reflector structure in micromorph tandem solar cells. International Journal of Photoenergy, 2012. https://doi.org/10.1155/2012/513238
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