Abstract
The quantum efficiency in CdTe p-n junctions is calculated taking into account realistic electrical parameters. Experiments are in agreement with computations and show quantum efficiencies as high as 75% without antireflecting coating. The diode dark current is predominantly due to generation recombination in the space charge layer and increases in very shallow junctions. Conversion efficiency is presently limited by surface recombination velocity and low surface doping which leads to surface voltage drops and voltage dependent photocurrent.
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CITATION STYLE
Lincot, D., Barbe, M., Cohen Solal, G., & Marfaing, Y. (1981). THEORETICAL AND EXPERIMENTAL STUDY OF QUANTUM AND ENERGY CONVERSION EFFICIENCY IN CdTe p-n JUNCTIONS. In Commission of the European Communities, (Report) EUR (pp. 882–886). D. Reidel Publ Co. https://doi.org/10.1007/978-94-009-8423-3_144
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