A 125-GHz 140-mW inGaAs/InP composite-channel HEMT MMIC power amplifier module

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Abstract

Abstract: A millimeter-wave power amplifier module achieves 140mW maximum output power and 80mW output 1-dB gain com- pression point at 125GHz. The 0.08μm gate length InGaAs/InP composite-channel HEMTs were applied to single-chip coplanar-design amplifier MMIC. The module's output power in this frequency band is a record to the best of our knowledge.

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Kosugi, T., Sugiyama, H., Murata, K., Takahashi, H., Hirata, A., Kukutsu, N., … Enoki, T. (2009). A 125-GHz 140-mW inGaAs/InP composite-channel HEMT MMIC power amplifier module. IEICE Electronics Express, 6(24), 1764–1768. https://doi.org/10.1587/elex.6.1764

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