The p-n junction diode is a simple two-terminal solid-state switch, but the theories underlying its operation encompass the central core of the semiconductor device physics. Thus, the I-V modeling of the junction diode should provide a convenient basis for modeling other kinds of semiconductor devices, including the silicon nanowire field effect transistor (SNWFET). Additionally, the p-n junction is used extensively as photodiodes, solar cells, light-emitting and laser diodes, etc. and constitutes a key element of MOSFET. This chapter is addressed to the I-V modeling and applications of the p-n junction diode and should thus provide a general background for discussing SNWFETs in the chapters to follow.
CITATION STYLE
Kim, D. M., Kang, B. K., & Jeong, Y. H. (2014). P-N junction diode: I-V behavior and applications. In Nanowire Field Effect Transistors: Principles and Applications (Vol. 9781461481249, pp. 39–62). Springer New York. https://doi.org/10.1007/978-1-4614-8124-9_3
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