Metal–Semiconductor Field-Effect Transistors Based on the Amorphous Multi-Anion Compound ZnON

Abstract

Electrical properties of metal–semiconductor field-effect transistors (MESFETs) based on the amorphous n-type multi-anion compound zinc oxynitride (ZnON) comprising reactively sputtered platinum as Schottky gate are presented. The Schottky barrier diodes reveal a rectification ratio of 4 × 103 at ±2 V and an ideality factor of 1.43. The investigated MESFETs show good switching characteristics with a switching voltage below 2 V, low subthreshold swing of 112 mV dec−1 and reasonable current on/off ratios up to 5 × 105. Additionally, the stability of the devices under visible light illumination is proven.