Solar-and visible-blind AlGaN photodetectors

Abstract

This chapter presents an overview on UV photodetectors based on the AlxGa1− xN material system. After an introduction into the field of UV photodetection and material-related issues, the main physics, the operation principles, and characteristic parameters of the most popular photodetector device types will be briefly addressed including the photoconductor, the Schottky barrier diode, the metal-semiconductor-metal structure, the p-i-n diode, the avalanche detector as well as the phototube and the photomultiplier tube. Further, scientific results on AlxGa1− xN -based photodetectors are compiled in order to illustrate the potential of the different photodetector device types for a wide range of UV applications. And finally, the state-of-the-art of commercially available photodetectors for UV detection and monitoring is discussed.