Abstract
The time evolution of the minority electron velocity and temperature in p-GaAs towards the steady state is calculated for high-electric fields and doping concentrations of 1.5×1017 and 1.5×1018 cm-3. It is shown that the velocity overshoot is less pronounced for high doping concentration. The electron-hole interaction reduces the overshoot effect, which indicates its role in the high-field transport transient of minority carriers in p-GaAs.
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CITATION STYLE
Alencar, A. M., Nobre, F. A. S., Sampaio, A. J. C., Freire, V. N., & Da Costa, J. A. P. (1991). High-field transport transient of minority carriers in p-GaAs. Applied Physics Letters, 59(5), 558–560. https://doi.org/10.1063/1.105385
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