Quantum Corrected Drift–Diffusion Modeling and Simulation of Tunneling Effects in Nanoscale Semiconductor Devices

  • Cassano G
  • de Falco C
  • Giulianetti C
  • et al.
N/ACitations
Citations of this article
3Readers
Mendeley users who have this article in their library.
Get full text

Cite

CITATION STYLE

APA

Cassano, G., de Falco, C., Giulianetti, C., & Sacco, R. (2006). Quantum Corrected Drift–Diffusion Modeling and Simulation of Tunneling Effects in Nanoscale Semiconductor Devices (pp. 301–307). https://doi.org/10.1007/978-3-540-32862-9_43

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free