Introduction

Abstract

This book has been written for the following reasons. First, since the beginning of the century the CMOS technology has undergone a materials revolution, driven by the introduction of many novel materials and elements, like metal oxide high-κ dielectrics, aggressive copper metallization in interconnects and 3D integration, silicides and silicogermanides which enhances the risk for metal contamination in the active device layers. Second, continuous scaling has made devices susceptible to single metal-atom effects, which challenges contamination metrology and calls for new more sensitive analysis techniques. Finally, also thermal budgets are being reduced with scaling, so that alternative gettering techniques, like proximity gettering or hydrogen passivation have to be developed. This chapter starts with a general introduction to set the scene and gives a short chapter by chapter description of the contents.