We give a general overview on Silicon nanowire-based multi-terminal memristive devices. The functionality of the devices can be used for logic, memory, and sensing applications. It is shown that three-and four-terminal memristive devices can be used for both logic and memory applications. In particular, Schottky-barrier silicon nanowire FETs are very interesting devices due to their CMOS-compatibility and ease of fabrication.
CITATION STYLE
Sacchetto, D., Leblebici, Y., & De Micheli, G. (2014). Silicon nanowire-based memristive devices. In Memristors and Memristive Systems (Vol. 9781461490685, pp. 253–280). Springer New York. https://doi.org/10.1007/978-1-4614-9068-5_8
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