Photoelectric properties of Bi2Se3 films grown by thermal evaporation method

Abstract

The Bi2Se3 films were prepared by thermal evaporation on different substrates (FTO, ITO and Glass). The structure and morphology are characterized by XRD and SEM. The optical band gap (E g) is 1.47 eV, 1.54 eV, and 1.59 eV, respectively. The I-V and C-V curves have been obtained by a photoelectrochemical (PEC) cell system, and the results indicated the Bi2Se3 film is n-type semiconductor. The transient photocurrent response of Bi2Se3/FTO and Bi2Se3/ITO were measured to evaluate the application potential of Bi2Se3 films in solar cell. The above results indicated that the Bi2Se3 films have advantages in the application of solar cells.