Behavioural Electro-Thermal Modelling of SiC Merged PiN Schottky Diodes

Abstract

This paper presents a new accurate behavioural static model of SiC Merged PiN Schottky (MPS) diode. This model is dedicated to static and quasi-static electro-thermal simulations of MPS diodes for industrial applications. The model parameters were extracted using the Weighted Least Square (WLS) method for a few selected commercially available SiC MPS diodes. Additionally, the PSPICE Analogue Behavioural Model (ABM) model implementation is also given. The relevance of the model has been statistically proven. The thermal behaviour of the devices was taken into account using the lumped Cauer canonical networks extracted from electro-thermal measurements.