II-VI semiconductors are of great importance due to their applications in various electro-optic devices. CdSe is a suitable material for the fabrication of photovoltaic devices. We have prepared CdSe films by a sintering method and studied for their applications in photovoltaic devices. The energy band gaps of these films are determined by reflection spectra in wavelength range 400-900 nm. Current-voltage characteristics and X-ray diffraction patterns of these films are also reported.
CITATION STYLE
Tenth E.C. Photovoltaic Solar Energy Conference. (1991). Tenth E.C. Photovoltaic Solar Energy Conference. Springer Netherlands. https://doi.org/10.1007/978-94-011-3622-8
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