Optimization of fluorine plasma treatment for interface improvement on HfO2/In0.53Ga0.47As MOSFETs

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Abstract

This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment. The optimum condition of CF4/O2 plasma treatment has been systematically studied and found to be 30 W for 3-5 min. Approximately 5× reduction in interface trap density from 2.8 × 1012 to 4.9 × 1011 cm-2eV-1 has been demonstrated with fluorine (F) incorporation. Subthreshold swing has been improved from 127 to 109 mV/dec. Effective channel mobility has been enhanced from 826 to 1,144 cm2/Vs.

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Chen, Y. T., Wang, Y., Xue, F., Zhou, F., & Lee, J. C. (2012). Optimization of fluorine plasma treatment for interface improvement on HfO2/In0.53Ga0.47As MOSFETs. Applied Sciences (Switzerland), 2(1), 233–244. https://doi.org/10.3390/app2010233

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