Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots

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Abstract

Quantum dots as single-photon sources have several advantages, such as emitting light over a broad spectral range and being photostable. Quantum dots with densities as low as 1 dot/μm 2 have been achieved using ultra-low-rate epitaxy and single-dot emission measured without apertures or post-growth processing. Both excitionic and biexcitonic emissions are observed from single dots created in this way, appearing as doublets with a fine-structure splitting of 320 μeV. The polarization of the split states is also investigated. Hanbury Brown-Twiss correlation measurements for the excitonic emission under cw excitation show anti-bunching behavior with an autocorrelation value of g (2)(0) = 0.2. © 2012 American Institute of Physics.

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Ugur, A., Kremling, S., Hatami, F., Höfling, S., Worschech, L., Forchel, A., & Ted Masselink, W. (2012). Single-photon emitters based on epitaxial isolated InP/InGaP quantum dots. Applied Physics Letters, 100(2). https://doi.org/10.1063/1.3676273

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