Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators

2Citations
Citations of this article
5Readers
Mendeley users who have this article in their library.
Get full text

Abstract

A simple method to form ultra-thin (<20 nm) semiconductor layers with a higher mobility on a 3D-structured insulating surface is required for next-generation nanoelectronics. We have investigated the solid-phase crystallization of amorphous Ge layers with thicknesses of 10-80 nm on insulators of SiO2 and Si3N4. We found that decreasing the Ge thickness reduces the grain size and increases the grain boundary barrier height, causing carrier mobility degradation. We examined two methods, known effective to enhance the grain size in the thicker Ge (>100 nm). As a result, a relatively high Hall hole mobility (59 cm2 V-1 s-1) has been achieved with a 20 nm thick polycrystalline Ge layer on Si3N4, which is the highest value among the previously reported works.

Cite

CITATION STYLE

APA

Oishi, R., Asaka, K., Bolotov, L., Uchida, N., Kurosawa, M., & Nakatsuka, O. (2022). Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators. Japanese Journal of Applied Physics, 61(SD). https://doi.org/10.35848/1347-4065/ac4686

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free