Thermal stability of dopants in laser annealed silicon

Abstract

As semiconductor device dimensions continue to decrease, the main challenge in the area of junction formation involves decreasing the junction depth while simultaneously decreasing the sheet resistance. Laser annealing is being investigated as an alternative to rapid thermal annealing to repair the damage from ion implantation and to activate the dopants. With this technique, uniform, box-shaped profiles are obtained, with dopant concentrations that can exceed equilibrium solubility limits at normal processing temperatures. Unfortunately, these super-saturated dopant concentrations exist in a metastable state and deactivate upon further thermal processing. In this article, we describe a comprehensive study of the deactivation kinetics of common dopants (P, B, Sb) across a range of concentrations and annealing conditions. For comparison, As deactivation data from the literature is also presented. P and As deactivate substantially at temperatures as low as 500°C, while Sb at moderate concentrations and B remain fully active until 700 to 800°C. It is proposed that As and P deactivate through the formation of small dopant-defect clusters while B deactivates through precipitation. The proximity to the surface is shown to be a second-order effect. © 2002 American Institute of Physics.