Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements

Abstract

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV. © 2011 TMS.