The adsorption of a single Ag atom on both clear Si(111)-7 × 7 and 19 hydrogen terminated Si(111)-7 × 7 (hereafter referred as 19H-Si(111)-7 × 7) surfaces has been investigated using first-principles calculations. The results indicated that the pre-adsorbed H on Si surface altered the surface electronic properties of Si and influenced the adsorption properties of Ag atom on the H terminated Si surface (e. g., adsorption site and bonding properties). Difference charge density data indicated that covalent bond is formed between adsorbed Ag and H atoms on 19H-Si(111)-7 × 7 surface, which increases the adsorption energy of Ag atom on Si surface. © 2009 to the authors.
CITATION STYLE
Lin, X. Z., Li, J., & Wu, Q. H. (2010). Influences of H on the Adsorption of a Single Ag Atom on Si(111)-7 × 7 Surface. Nanoscale Research Letters, 5(1), 143–148. https://doi.org/10.1007/s11671-009-9456-x
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