Performance of a nitrogen implanted large aperture THz emitter

Abstract

Improved bandwidth of a large aperture nitrogen implanted GaAs photoconductive THz emitter is presented in this paper. An effect of nitrogen ion implantation on semi-insulating GaAs has been studied in a sample implanted at two doses: 3×10 14 and 6×10 14 ions/cm 2. The carrier life time of the investigated material was measured by means of the femtosecond time-resolved-reflectance technique. The implantation process reduced the carrier lifetime of GaAs by 65%.The bandwidth of the THz emitter was tested in a Time Domain Spectroscopy arrangement. Usable bandwidth of the TDS set-up based on the implanted emitter increased from 1 to 1.5THz. © 2012 Photonics Society of Poland.