Investigation on functional properties of hall-effect sensor made of graphene

Abstract

Hall-effect sensors are commonly used in many industrial applications as position detectors, incremental counters and sensing elements of DC current transformers. Previously developed Hall-effect sensors utilize InAs or InSb as a sensing material. Recently, graphene seems to be the most promising material. Monolayer graphene was grown using the Chemical Vapor Deposition (CVD) method on the substrates. Prior to the growth, in situ etching of the SiC surface was carried out in hydrogen atmosphere. Functional properties of developed Hall-effect sensors based on graphene were tested on special experimental setup. Results presented in the paper indicate, that graphene is very promising material for development of Hall-effect sensors. Such sensors exhibit high magnetic field sensitivity and linear characteristic. It was also observed, that functional parameters of graphene Hall-effect sensors are diversified from the point of view of its transport properties. This phenomenon creates important possibilities of further optimization of Hall-effect sensors during their production.