In this work, the enhanced resistive switching of ZrN-based resistive switching memory is demonstrated by embedding TiO2 layer between Ag top electrode and ZrN switching layer. The Ag/ZrN/n-Si device exhibits unstable resistive switching as a result of the uncontrollable Ag migration. Both unipolar and bipolar resistive switching with high RESET current were observed. Negative-SET behavior in the Ag/ZrN/n-Si device makes set-stuck, causing permanent resistive switching failure. On the other hand, the analogue switching in the Ag/TiO2 /ZrN/n-Si device, which could be adopted for the multi-bit data storage applications, is obtained. The gradual switching in Ag/TiO2 /ZrN/n-Si device is achieved, possibly due to the suppressed Ag diffusion caused by TiO2 inserting layer. The current–voltage (I–V) switching characteristics of Ag/ZrN/n-Si and Ag/TiO2 /ZrN/n-Si devices can be well verified by pulse transient. Finally, we established that the Ag/TiO2 /ZrN/n-Si device is suitable for neuromorphic application through a comparison study of conductance update. This paper paves the way for neuromorphic application in nitride-based memristor devices.
CITATION STYLE
Choi, J., & Kim, S. (2020). Improved stability and controllability in zrn-based resistive memory device by inserting tio2 layer. Micromachines, 11(10). https://doi.org/10.3390/mi11100905
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