Charged basal stacking fault scattering in nitride semiconductors

Abstract

A theory of charge transport in semiconductors showing built-in polarization (polar) is developed in the presence of basal stacking faults. The theory is based on quantum tunneling in conjunction with the semiclassical description of diffusive charge transport. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in gallium nitride films consisting of a large number basal stacking faults, and the result is compared with experimental data. © 2011 American Institute of Physics.