We have grown no-doped and Al-doped ZnO thin films with different Al element composition by ultrasonic spray pyrolysis (USP). The deposition by USP was performed with the temperature of 450 °C, ultrasonic frequency of 1.7 MHz, and under atmosphere ambient for 15 minutes on top of Si substrate. Structurally, X-ray diffraction (XRD) pattern of non-doping and Al-doped ZnO (AZO) thin film have polycrystalline hexagonal wurtzite and amorphous. Optical absorbance confirmed that AZO thin films with polycrystalline phase have higher absorbance than amorphous. According to the frequency-dependent Nyquist plot of non-doping and AZO thin films at room temperature, we believed the proper concentration of Al in ZnO thin films can be used to improve electron transfer ability.
Mendeley helps you to discover research relevant for your work.
CITATION STYLE
Sugihartono, I., Budi, S., Fahdiran, R., & Handoko, E. (2020). The effect of Al Element on Electrochemical Impedance of ZnO Thin Films. In Journal of Physics: Conference Series (Vol. 1428). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/1428/1/012033