The effect of Al Element on Electrochemical Impedance of ZnO Thin Films

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Abstract

We have grown no-doped and Al-doped ZnO thin films with different Al element composition by ultrasonic spray pyrolysis (USP). The deposition by USP was performed with the temperature of 450 °C, ultrasonic frequency of 1.7 MHz, and under atmosphere ambient for 15 minutes on top of Si substrate. Structurally, X-ray diffraction (XRD) pattern of non-doping and Al-doped ZnO (AZO) thin film have polycrystalline hexagonal wurtzite and amorphous. Optical absorbance confirmed that AZO thin films with polycrystalline phase have higher absorbance than amorphous. According to the frequency-dependent Nyquist plot of non-doping and AZO thin films at room temperature, we believed the proper concentration of Al in ZnO thin films can be used to improve electron transfer ability.

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APA

Sugihartono, I., Budi, S., Fahdiran, R., & Handoko, E. (2020). The effect of Al Element on Electrochemical Impedance of ZnO Thin Films. In Journal of Physics: Conference Series (Vol. 1428). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/1428/1/012033

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