Abstract
A comparison of full quantum device simulation with semi-classical methods is made for an unintended single atomistic dopant at various locations in a 10 nm double gate MOSFET transistor. The density gradient method comes closest to the non-equilibrium Green function results for fails seriously when the unwanted charge is located well-within the channel. © 2006 IOP Publishing Ltd.
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CITATION STYLE
Martinez, A., Barker, J. R., Svizhenko, A., Anantram, M. P., Brown, A. R., Biegel, B., & Asenov, A. (2006). The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: Classical to full quantum simulation. Journal of Physics: Conference Series, 38(1), 192–195. https://doi.org/10.1088/1742-6596/38/1/046
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