Fabrication and characterization of In0.9Ga0.1o EGFET pH sensors

Abstract

In this study, the In0.9Ga0.1O sensing membrane were deposited by using the RF magnetron sputtering at room temperature and combined with commercial MOSFETs as the extended gate field effect transistor (EGFET) pH sensors. The sensing performance of the In0.9Ga0.1O EGFET pH sensors were measured and analyzed in the pH value of range between 2 to 12. In the saturation region, the pH current sensitivity calculated from the linear relationship between the IDS and pH value was approximately 56.64 µA/pH corresponding to the linearity of 97.8%. In the linear region, the pH voltage sensitivity exhibited high sensitivity and linearity of 43.7 mV/pH and 96.3%, respectively. The In0.9Ga0.1O EGFET pH sensors were successfully fabricated and exhibited great linearity. The analyzed results indicated that the In0.9Ga0.1O was a robust material as a promising sensing membrane and effectively used for pH sensing detection application.