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High-field transport in semiconductors studied via ultrabroadband THz sampling

Springer Series in Chemical Physics (1998) 63 275-277
DOI: 10.1007/978-3-642-72289-9_83
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Abstract

Ultrafast carrier transport in GaAs and InP is investigated with an unprecedented time resolution of 20 fs and for electric fields up to 130 kV/cm. We provide quantitative values for the maximum velocity overshoot, depending on material and electric field. The data are in agreement with the semiclassical theory even for very high fields.

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Leitenstorfer, A., Hunsche, S., Shah, J., Nuss, M. C., & Knox, W. H. (1998). High-field transport in semiconductors studied via ultrabroadband THz sampling. Springer Series in Chemical Physics, 63, 275–277. https://doi.org/10.1007/978-3-642-72289-9_83

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