Semiconductor Characterization Techniques

Abstract

In this Chapter we discussed several important semiconductor characterization techniques, covering structural, optical, and electrical properties of semiconductors. X-ray diffraction, electron microscopy (SEM and TEM), energy dispersive analysis using x-rays (EDX), Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), Rutherford backscattering (RBS), and scanning probe microscopy (SPM) were covered under structural characterization techniques. Optical characterization techniques included photoluminescence spectroscopy (PL), cathodoluminescence spectroscopy (CL), reflectance and absorbance measurements, ellipsometry, Raman spectroscopy, and Fourier transform spectroscopy. Finally, we briefly discussed some of the electrical characterization techniques such as resistivity measurement, Hall effect measurement, capacitance techniques, and electrochemical capacitance- voltage (ECV) profiling. These characterization techniques are instrumental in understanding the most important properties of various semiconductors as building blocks of many useful electronic and optoelectronic devices.