Simultaneous thickness and thermal conductivity measurements of thinned silicon from 100 nm to 17 μ m

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Abstract

Studies of size effects on thermal conductivity typically necessitate the fabrication of a comprehensive film thickness series. In this Letter, we demonstrate how material fabricated in a wedged geometry can enable similar, yet higher-throughput measurements to accelerate experimental analysis. Frequency domain thermoreflectance (FDTR) is used to simultaneously determine the thermal conductivity and thickness of a wedged silicon film for thicknesses between 100 nm and 17 μm by considering these features as fitting parameters in a thermal model. FDTR-deduced thicknesses are compared to values obtained from cross-sectional scanning electron microscopy, and corresponding thermal conductivity measurements are compared against several thickness-dependent analytical models based upon solutions to the Boltzmann transport equation. Our results demonstrate how the insight gained from a series of thin films can be obtained via fabrication of a single sample.

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CITATION STYLE

APA

Scott, E. A., Perez, C., Saltonstall, C., Adams, D. P., Carter Hodges, V., Asheghi, M., … Ziade, E. (2021). Simultaneous thickness and thermal conductivity measurements of thinned silicon from 100 nm to 17 μ m. Applied Physics Letters, 118(20). https://doi.org/10.1063/5.0050888

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