Abstract
In the paper a new approach to building a νMOS threshold element and an artificial neuron on its base is discussed. The implementability of the known νMOS threshold elements is restricted by the sum of input weights. It is shown that by switching the element capacitors in the pre-charge phase it is possible to reduce the implementability restriction to the maximum value of the threshold. It essentially expands the set of threshold functions realizable on one element. © Springer-Verlag 2001.
Cite
CITATION STYLE
Varshavsky, V., & Marakhovsky, V. (2001). A neuron-MOS threshold element with switching capacitors. In Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) (Vol. 2206 LNCS, pp. 430–435). Springer Verlag. https://doi.org/10.1007/3-540-45493-4_44
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