Mid-infrared response of reduced graphene oxide and its high-temperature coefficient of resistance

Abstract

Much effort has been made to study the formation mechanisms of photocurrents in graphene and reduced graphene oxide films under visible and near-infrared light irradiation. A built-in field and photo-thermal electrons have been applied to explain the experiments. However, much less attention has been paid to clarifying the mid-infrared response of reduced graphene oxide films at room temperature. Thus, mid-infrared photoresponse and annealing temperature-dependent resistance experiments were carried out on reduced graphene oxide films. A maximum photocurrent of 75 μA was observed at room temperature, which was dominated by the bolometer effect, where the resistance of the films decreased as the temperature increased after they had absorbed light. The electrons localized in the defect states and the residual oxygen groups were thermally excited into the conduction band, forming a photocurrent. In addition, a temperature increase of 2°C for the films after light irradiation for 2 minutes was observed using absorption power calculations. This work details a way to use reduced graphene oxide films that contain appropriate defects and residual oxygen groups as bolometer-sensitive materials in the mid-infrared range.