Abstract
The reading operation is designed to address a memory cell and extrapolate the information stored therein. In the case of a NAND-type Flash memory, the memory cells are connected in series, in groups (strings) of 2k cells, up to 64. © 2010 Springer Science+Business Media B.V.
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CITATION STYLE
APA
Crippa, L., & Micheloni, R. (2010). Sensing circuits. In Inside NAND Flash Memories (pp. 197–233). Springer Netherlands. https://doi.org/10.1007/978-90-481-9431-5_8
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