Metallic single electron devices fabricated using a multilayer technique

Abstract

A process to fabricate metallic single electron devices is developed in which different layers of the device are made by a separate process cycle including a separate resist mask. This methodology is able to overcome the insulation problem of the edges by building a suspended island that has no contact with the edges or with the substrate. With this technique, it is possible to position the gate underneath the island. The main features of this process are illustrated.