Wafer scale integration

Abstract

A description is given of the Westinghouse RF Wafer-Scale Integration (RFWSI) program, a novel approach to controlling the cost of fighter aircraft radar modules. The technologies required for the program include three implants of silicon into 3-inch-diameter semi-insulating GaAs wafers and proton implants providing isolation between the closely spaced elements. Wafers will be cut so that a 'tile' containing several modules may be mounted on a carrier and form part of a tiled array of several hundred modules. Each tile will have electric feeds that pass through the gallium arsenide to the underlying layers. Integral to this structure are the cooling channels, the RF and DC manifolds for the distribution of signals, and the wideband flared notch antenna. Construction of an active array using this configuration will result in reduced assembly costs because the parts count is reduced. The implementation of this approach in the design of advanced fighter aircraft is considered.