Abstract
Cylindrical InxGa1-xAs NWs have been successfully grown at low growth temperature using MOCVD. Field Emission-Scanning Electron Microscopy (FE-SEM) characterization and Energy Dispersive X-ray (EDX) analysis have been used to investigate the morphology and chemical composition of NWs, respectively. Both characterization results consistently reinforce that the NWs growth were via direct impinging mechanism and NW have relatively uniform chemical composition. © 2011 Asian Network for Scientific Information.
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Wibowo, E., Othaman, Z., Sakrani, S., Ameruddm, A. S., Aryanto, D., Muhammad, R., & Sumpono, I. (2011). Morphology and chemical composition of InxGal-xAs NWs Au-assisted grown at low growth temperature using MOCVD. Journal of Applied Sciences, 11(7), 1315–1320. https://doi.org/10.3923/jas.2011.1315.1320
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