Force Spectroscopy on Semiconductor Surfaces

Abstract

In this chapter, we introduce recent works on force spectroscopy performed using the frequency modulation detection method that have contributed to widen the knowledge and applicability of atomic force microscopy (AFM) for the study of surfaces with atomic resolution. We first introduce some experimental considerations regarding force spectroscopy acquisition. Then, we discuss how the combination force spectroscopy and first-principle calculations has contributed to clearly identify a channel for the dissipation of energy from the cantilever oscillation, as well as to clarify the interplay between atomic relaxations and differences in the tip–surface short-range interaction detected over atoms populating heterogeneous semiconductor surfaces. We introduce a protocol for single-atom chemical identification using AFM, which is based on the precise quantification of the tip–surface short-range interaction forces. Finally, anticipating the future general use of small cantilever oscillation amplitudes, we discuss force spectroscopy acquisition using higher flexural modes of rectangular cantilevers and oscillation amplitude values as small as 3.6 Ǻ.